smd type www.kexin.com.cn 1 diodes sod-523 unit: mm 0.77max 0.6 +0.1 -0.1 0.3 +0.05 -0.05 0.8 +0.05 -0.05 1.2 +0.1 -0.1 1.6 +0.1 -0.1 0.1 +0.05 -0.02 0.07max +- silicon schottky barrier diode HSC276 features high forward current, low capacitance. ultra small flat package (ufp) is s uitable for surface mount design. absolute maximum ratings ta = 25 parameter symbol value unit reverse voltage v r 3v average rectified current i o 30 ma junction temperature t j 125 storage temperature t stg -55to+125 electrical characteristics ta = 25 parameter symbol conditions min typ max unit reverse voltage v r i r =10 a 30 v reverse current i r v r = 0.5 v 0.5 a forward voltage i f v r =0.5v 35 ma capacitance c v r = 0.5 v, f = 1 mhz 0.85 pf c=200pf , both forward and reverse direction 1 pulse. note 1. failure criterion ; i r 100ma at vr =0.5 v v esd-capab ility (note 1) 30 marking marking c2
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